Solid State Technology and Devices Seminar: High-Q chalcogenide device platform without direct etching process for non-linear and mid-IR Applications

Seminar: Solid State Technology and Devices: EE: CS | May 10 | 1-2 p.m. | Cory Hall, The Hogan Room, 521

 Sangyoon Han, Postdoc, KAIST, Korea

 Electrical Engineering and Computer Sciences (EECS)

There have been large efforts made to implement non-linear on-chip devices using chalcogenide glasses to exploit its high optical nonlinearities and transparency in infrared range. However, the operating powers of the devices are significantly high due to their low Q-factors (~10^5). The low Q-factors of the devices are originated from sidewall roughness occurred during etching process. In this talk, I will show our new device platform that defines chalcogenide devices without direct etching process. Using our platform, we have demonstrated chalcogenide resonators with record high (for on-chip chalcogenide devices) Q-factor (1.2 x 10^7) and Brillouin lasers with record low (for on-chip chalcogenide devices) threshold power (2.5mW). The device platform allows flexible control of dispersion which is a crucial element for non-linear photonic devices. The device platform also allows efficient and flexible coupling between resonators and waveguides. I will conclude the talk with comparing power efficiency of nonlinear devices of our device platform to that of several other on-chip platforms.

 dadevera@berkeley.edu, 510-642-3214