Pushing the boundaries of electron devices?from transistors to
photovoltaics?demands complete control over device architectures and
material systems. However, traditional growth and fabrication techniques
often fall short when optimal design calls for non-planar geometries or
integration of non-epitaxial material systems.
Thus, development of techniques for X-on-Y growth and integration, such as:
(i) bottom-up growth of geometry and shape-controlled nanowires, (ii)
integration of dissimilar material systems such as III-V's and Si, and (iii)
direct growth of high-quality semiconductors on metals are critical. In this
talk, I discuss how semiconductor layer transfer techniques can be used to
fabricate high-mobility III-V transistors on Si substrates, and the
vapor-liquid-solid (VLS) growth mode can be used to grow templated nanowires
and high-quality InP thin films directly on metal foils.
Specifically, I will cover three methods that move towards enabling X-on-Y.
First, I will show a compound semiconductor on insulator (XOI) layer
transfer technique that enables integration of free-standing, ultra-thin
III-V membranes on Si substrates. The second method is a templated VLS
nanowire growth technique for 3-D semiconductor structures on metal
substrates. The last technique I illustrate is a thin-film
vapor-liquid-solid growth technique for the direct growth of large grain
(10-100 micron) polycrystalline InP on metal substrates. etal substrates. s.