Solid State Technology and Devices Seminar: Engineering transistors atom by atom with heterostructures of 2D materials

Seminar | August 18 | 1-2 p.m. | Cory Hall, 521 - The Hogan Room

 Giuseppe Iannaccone, University of Pisa

 Electrical Engineering and Computer Sciences (EECS)

How close are we to the possibility of engineering next generation transistors atom by atom, as materials science and device engineering converge?

Recently, the so-called “materials-on-demand paradigm” has been proposed, thanks to the possibility of forming a “three-dimensional (3D) material” with tailored characteristics by combining layers of two-dimensional (2D) materials, such as graphene and other single-layer semiconductors, insulators, and metals.

In many ways, this paradigm is a modern and challenging evolution of what in the 1980s was called “band-gap engineering” or “band-structure engineering”, i.e., the artificial modification of band edge profiles using heterostructures made possible by epitaxial growth of III-V and II-VI material systems.

Lateral and vertical heterostructures of 2D materials could represent a revolutionary and enabling technology to device engineering providing the possibility to engineer a transistor at the atomistic scale.

In this talk I discuss the challenges, opportunities, and the potential of atomistic engineering of electron devices exploiting the fundamental properties of 2D material heterostructures.
From the point of view of physical understanding, I will also highlight some peculiarities of the off-plane transport in heterostructures of 2D materials, that are not observed in the heterostructures based on III-V and II-VI materials systems.

 ahburr@berkeley.edu, 510 642-2384