Seminar | February 23 | 2-3 p.m. | 60 Evans Hall
Prof. Dmitri V. Talapin, Univ of Chicago, Chemistry
The synthesis of inorganic nanomaterials has seen impressive developments, both in the fundamental understanding of nucleation, growth and surface chemistry of inorganic phases, and in the ability to prepare functional materials with precisely engineered optical and electronic properties. However, the lack of atomic precision in nanomaterial synthesis restricts our ability to harness all the power of this broad and diverse class of matter. Heterogeneity introduces broadening of the absorption and emission spectra, reduces charge carrier mobility in nanocrystal solids, and generally restricts our ability to engineer nanomaterials.
I will discuss new approach for colloidal synthesis of nanomaterials with minimal, ideally no, size distribution. The concept is inspired by gas-phase atomic layer deposition (ALD) widely used in microelectronics. Our studies show that the ALD concept can be successfully implemented in solution and, when applied to nanomaterials, enables layer-by-layer growth of crystalline lattices with close-to-atomic precision.
I will also discuss recent advances in the surface chemistry of semiconductor nanostructures. Molecular inorganic species can be designed to electronically couple individual nanostructures into nanocomposite materials with high electron mobility. By making surface ligands photochemically active, we introduce a general approach for photoresist-free, direct optical lithography of functional inorganic nanomaterials (DOLFIN). Examples of patterned materials include metals, semiconductors, oxides, and magnetic and rare earth compositions. No organic impurities are present in the patterned layers, which helps achieve good electronic and optical properties.
The ability to directly pattern all-inorganic layers using a light exposure dose comparable to that of organic photoresists opens up a host of new opportunities for additive nanomanufacturing.