Emerging Semiconductor Nanoscale Devices and Systems for Classical and Quantum Information Processing
Seminar | November 8 | 11:30 a.m.-12:30 p.m. | 293 Cory Hall
Prof. Philip Feng, University of Florida
Emerging semiconductors, ranging from atomic layer semiconducting crystals (such as transition metal dichalcogenides (TMDCs) and black phosphorus) to wide and ultrawide bandgap materials (such as SiC, Ga2O3, and h-BN), along with their heterostructures, offer compelling platforms for engineering new electronic, photonic devices and transducers, where the unconventional and unique properties of these crystals can be harnessed for engineering both classical and quantum signal processing and sensing schemes. In this presentation, I will describe some of my research groups latest endeavors and results on advancing solid-state device physics and engineering, by employing some of these emerging semiconductors. In classical domain, we build atomically thin transistors, optoelectronic devices, and a new class of nanoscale transducers, 2D nanoelectromechanical systems (NEMS), all enabled by 2D semiconductors and their van der Waals heterostructures. I will demonstrate examples of how the unconventional properties of these structures and their internal multiphysical effects have led to new device functions and performance. I shall also discuss examples of SiC and Ga2O3 devices for biological and physical sensing applications. Toward quantum engineering, atomistic defects in wide-bandgap crystals support single-photon quantum emitters (QEs) that are promising for enabling quantum bits (qubits) at room temperature. Built upon our earlier attainments in SiC photonics and 2D devices, we explore these platforms and their hybrid integration, toward developing quantum transduction and information processing functions in chip-scale integrated systems.