Solid State Technology and Devices Seminar: Silicon Carbide Micro-/Nanosystems for Harsh Environment Applications

Seminar | November 16 | 1-2 p.m. | Cory Hall, 521 Hogan Room

 Roya Maboudian, UC Berkeley Department of Chemical & Biomolecular Engineering

 Electrical Engineering and Computer Sciences (EECS)

Silicon has been the dominant semiconducting material in micro-/nanosystems technologies. However, the material and surface properties of silicon impose limitations on its use in applications involving harsh environment (such as high temperature, high radiation and corrosive conditions). Silicon carbide (SiC), a wide bandgap semiconductor, is emerging as a material to address the limitations of silicon as it is temperature tolerant, radiation resistant, and chemically inert. In this talk, I will present recent advances, by our group and others, in the materials science and manufacturing technology of SiC thin film and low dimensional structures, and some applications that these advances have enabled ranging from harsh environment sensing to energy technologies.

 CA, m.rivera@eecs.berkeley.edu, 5106423214