Dissertation Talk: Low Power Design with Spintronic MTJ Devices
Seminar: Dissertation Talk: EE | May 10 | 2-3 p.m. | 250 Sutardja Dai Hall
Yoonhwan Kang, UC Berkeley
Lowering power consumption of electronics is driven by three reasons: i) the worldwide energy consumption of semiconductor chips is a sizable contributor to the global warming, ii) the high-power density of the chips is one of the main obstacles to the scalability of the transistors, and iii) the market of Internet-of-Things has risen to a nontrivial sector of the global electronics market. Besides, in a recent decade, there have been various attempts to invent novel spintronic devices to solve such power problems.
In this talk, we will analyze the potential of spintronic devices, which are built with magnetic tunnel junctions (MTJs), in low power applications and provide general guidelines for device engineers to design those devices. It has been speculated that the tunnel magnetoresistance (TMR) of MTJ has to be as high as the on/off current ratio of transistors in order to make spintronic MTJ devices competitive with CMOS. But, it turned out that the energy efficiency of spintronic MTJ devices doesn't improve after the TMR exceeds a certain value, which is much lower than the on/off current ratio of CMOS.