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Semiconductor Nanoelectronic and Nanophotonic Devices: Performance, Controllability, and Manufacturability

Seminar: Solid State Technology and Devices | October 12 | 1-2 p.m. | 521 Cory Hall


Prof. Xiuling Li, University of Illinois, Urbana-Champaign

Electrical Engineering and Computer Sciences (EECS), EE 298-12


Interests in semiconductor nanowires (NWs) have increased exponentially over the past decade because of their unique optical and electrical properties. Integration of semiconductor NW based devices has been challenging for vertical nanowire devices since ex-situ assembly techniques are required to align planar NW devices. I will present our discovery of a type of NWs that is planar, self-aligned, twin-defect free, high carrier mobility, and transfer-printable. The planar nanowire growth and doping mechanism by MOCVD, as well as the device characteristics of MESFET, MOSFET, and HEMT using such GaAs NW as the channel material, will be analyzed.


voros@eecs.berkeley.edu, 510-642-2911