Solid State Technology and Devices Seminar: Electronic, Thermal, and (Some) Unusual Applications of 2D Materials
Seminar: Solid State Technology and Devices: EE: CS: Data Science | December 6 | 1-2 p.m. | Cory Hall, The Hogan Room, 521
Eric Pop, Professor, Stanford, Electrical Engineering, Materials Science & Engineering, and SystemX Alliance
This talk will present recent highlights from our research on two-dimensional (2D) materials including graphene, boron nitride (h-BN), and transition metal dichalcogenides (TMDs). The results span from material growth and fundamental measurements, to simulations, devices and system-oriented applications that take advantage of unusual 2D material properties. We have grown monolayer 2D semiconductors over large areas, including MoS2 , WSe2, and MoSe2 . We also uncovered that ZrSe2 and HfSe2 have native high-κ dielectrics ZrO2 and HfO2, which are of key technological relevance . Improved electrical contacts  led to the realization of 10 nm monolayer MoS2 transistors with the highest current reported to date, near ballistic limits . These could play a role in 3D heterogeneous integration of nanoelectronics, which presents significant advantages for energy-efficient computation . In less conventional applications, we utilized 2D materials as computing fabrics for analog dot product circuits , as highly efficient thermal insulators , and as the basis of thermal transistors . The last two examples could enable control of heat in thermal circuits analogous with electrical circuits. Combined, these studies reveal fundamental limits and some unusual applications of 2D materials, which take advantage of their unique properties.
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Dec 2016.  M. Aly et al., Computer 48, 24-33 (2015).  N. Wang et al., Symp. VLSI, Jun 2016.  S. Vaziri et
al., Science Adv. 5, eaax1325 (2019).  A. Sood et al. Nature Comm. 9, 4510 (2018).
CA, email@example.com, 510-642-3214