Solid State Technology and Devices Seminar: Silicon Carbide Micro-/Nanosystems for Harsh Environment Applications
Seminar: Solid State Technology and Devices: Energy Efficient Electronics Science (E3S): EE: CS | April 12 | 1-2 p.m. | Cory Hall
Roya Maboudian, Professor, Chemical and Biomolecular Engineering, University of California, Berkeley
Silicon has been the dominant semiconducting material in micro-/nanosystems technologies.
However, the material and surface properties of silicon impose limitations on its use in
applications involving harsh environment (such as high temperature, high radiation and
corrosive conditions). Silicon carbide (SiC), a wide bandgap semiconductor, is emerging as
a material to address the limitations of silicon as it is temperature tolerant, radiation
resistant, and chemically inert. In this talk, I will present recent advances, by our group and
others, in the materials science and manufacturing technology of SiC thin film and low
dimensional structures, and some applications that these advances have enabled ranging
from harsh environment sensing to energy technologies.