Special Seminar: Magnetic Memories with Topological Insulator and Compensated Ferrimagnet
Seminar: Solid State Technology and Devices | June 15 | 1-2 p.m. | Cory Hall, 521 Hogan Room
Luqiao Liu, Massachusetts Institute of Technology
New materials and physics mechanisms are required to further lower down the power consumption and increase the switching speed of magnetic memory devices. In this talk, I will focus on two novel material systems which can provide new opportunities for magnetic switching. First of all, I will discuss our recent study on compensated ferrimagnetic alloys which have antiferromagnetically coupled sublattices, low magnetic moment and fast switching dynamics. Particularly, I will show that efficient electrical reading and writing can be realized in those thin films with zero magnetic moment [1, 2]. Moreover, via studying the current induced domain wall motion, we demonstrate the speed advantage associated with those materials . Secondly, topological insulators has spin momentum locked surface states. In our experiment, we observe current induced magnetic switchings in topological insulator/magnet bilayer films at room temperature. The large spin torque efficiency makes topological insulators outstanding candidates for realizing power efficient magnetic switching devices.