Dissertation Talk: Development of New Processing Schemes for High Quality Electronic Materials on Amorphous and Flexible Substrates
Seminar | April 25 | 2-3 p.m. | 400 Cory Hall
III-V semiconductors are promising materials for a wide variety of electronic and optoelectronic applications due to their high electron mobilities as well as direct band gaps which can be tuned by changing the elemental composition of the material. However, they are limited in their application space due to two main factors: cost and the need for a lattice matched epitaxial substrate upon which to do growth.
In this talk, I will discuss a growth method which we have developed entitled templated liquid phase (TLP) growth which enables the growth of high quality III-V semiconductors directly onto amorphous substrates. The growth method is generally applicable to a wide range of III-V semiconductors including binary as well as ternary compounds. Methods for in-situ doping during TLP growth to tune the electronic and optoelectronic properties will be discussed. In addition, preliminary transistor device results as well as demonstrations of scalability, and 3D integration will be shown.