Seminar | February 14 | 1-2 p.m. | Cory Hall, The Hogan Room, 521
Shehrin Sayed, Postdoctoral Researcher, EECS, U.C. Berkeley
Emerging data-driven technologies highly rely on our electronic memory devices and there is an ongoing search for new materials and devices with improved capacity, speed, and dissipation. Spintronics and magnetism have significantly impacted our memory technologies, facilitated by the discoveries of new materials and phenomena. However, further density scaling is facing severe limitations due to the large switching current requirements. A pathway for further improvements is to explore new materials and phenomena that will lower the switching current and/or switch gear to an electric-field based switching mechanism.
In this talk, Ill discuss a new mechanism for electric-field induced switching based on several established quantum effects. The proposed mechanism decouples the switching energy threshold from the switching speed, which is surprisingly different from the conventional magnetic memory devices that exhibit a trade-off between these two parameters
CA, firstname.lastname@example.org, 5106423214