RF Linearity in SiGe HBTs: Characterization, Physics and Circuit Implications
Seminar | March 20 | 2-3 p.m. | 529 Cory Hall
Guofu Niu, ECE Department, Auburn University
Linearity determines the ability of communication circuits to function in the presence of strong interferers. This talks presents experimental characterization techniques, underlying physics, analysis techniques and circuit implications of Silicon-Germanium (SiGe) HBT linearity. Experimental characteristics of third-order intercept point (IP3) as functions of biasing collector currents, biasing collector-base voltage are discussed, together with cut-off frequency (fT) for HBTs of different breakdown voltages, to facilitate biasing optimization in RFIC design.
Dr. Niu received his PhD from Fudan University, Shanghai, China in 1997. He has been a Professor of Electrical and Computer Engineering at Auburn University since 2000. His research includes SiGe devices, RF CMOS, high-frequency on-chip characterization, radiation effects, low temperature electronics, compact modeling and TCAD. He has published over 200 papers, and is the co-author of the book Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, 2003 (with John Cressler). He is an Editor of the IEEE Transactions on Electron Devices.